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Toshiba C5198 NPN Transistor

Toshiba C5198 NPN Transistor

Original price was: ₹120.00.Current price is: ₹110.00.

SKU: TTC5198 Category: Tags: , , , ,

Description

DIMENSIONS :-

Type Designator: C5198
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO-3PN

The Toshiba C5198 is a silicon NPN triple diffused transistor that’s used for power amplifier applications. Here are some of its features and specifications:
  • Voltage
    The C5198 has a collector-base voltage (VCBO) of 140 V, a collector-emitter voltage (VCEO) of 140 V, and an emitter-base voltage (VEBO) of 5 V.
  • Current
    The C5198 has a collector current (IC) of 10 A and a base current (IB) of 1 A.
  • Power dissipation
    The C5198 has a collector power dissipation of 100 W at a temperature of 25°C.
  • Temperature
    The C5198 has a junction temperature (Tj) of 150°C and a storage temperature range (Tstg) of -55°C to 150°C.
  • Complementary
    The C5198 is complementary to the 2SA1941.
  • Audio amplifier

    The C5198 is suitable for use in the output stage of a 70-W high fidelity audio amplifier. 

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